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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD686 DESCRIPTION With TO-220C package Complement to type 2SB676 DARLINGTON High DC current gain APPLICATIONS Switching applications Hammer drive,pulse motor drive Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 100 80 5 4 TC=25ae 30 150 -50~150 Collector-base voltage Open emitter Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Open base Open collector UNIT V V V A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=3A; IB=6mA IC=3A; IB=6mA VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V 2000 1000 MIN 80 TYP. 2SD686 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 MAX UNIT V 1.5 2.0 20 2.5 |I V V A mA Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 0.2 IB1=-IB2=6mA VCC=30V;RL=10| 1.5 |I Fall time 0.6 |I s s |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD686 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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